Deep UV Lithography (DUV)

Deep UV lithography (in short DUV lithography) is an optical projection type lithography
technique where the pattern on a reticle/mask is projected to the wafer surface through a 4X or 5X optical system. The wavelengths used for DUV lithography are 248 nm or 193 nm. DUV lithography is a high speed lithographic technology suitable for large area masters of discrete components that are not bigger than 22 mm x 22 mm, the typical wafer level exposure field size of a DUV tool.

Deep UV Lithography and how we can help

NIL Technology offer DUV stepper lithography services based on a Canon FPA-3000 EX4 248 nm stepper and an ASML XX 248 nm stepper. The minimum line width is ~250 nm. For smaller line widths, please refer to our EBL service.

The Canon FPA-3000 EX4 uses a 5X projection system and the maximum field size on the substrate of 22 mm x 22 mm. The system can expose 100 mm and 150 mm wafers.

The ASML XXX uses a 4X projection system and the maximum field size on the substrate of 22 mm x 22 mm. The system can expose 100 mm, 150 mm and 200 mm wafers.

We can also offer a wide variety of pre- and post-processing of wafers if required.

Deep UV Lithography specifications

Canon FPA-3000 EX4 / ASML XX

Specifications
Wavelength
248 nm
Depth of focus
better than 1 µm
Lens distortion
max 50 nm
Max field size
22 mm x 22 mm
Field stitching error
less than 50 nm
Rotation accuracy
better than 10 nm
Alignment accuracy
better than 50 nm
Minimum linewidth
250 nm
Wafer sizes
100 mm, 150 mm, 200 mm

Resists
All resists are used with a bottom anti-reflection coating (BARC, DUV42P) to prevent standing waves in the resist and to promote adhesion between resist and wafer. In case the DUV layer is used for lift-off, a lift-off resist is required under the BARC layer because the BARC layer is not soluble in the organic solvents typically used for lift-off.

Resist name
Tone
JSR-M35G
Positive
JSR-M230Y
Positive
UVN2300
Negative

Design file requirements

In order to allow easy handling of design files for electron beam lithography the designs must be supplied in one of the following formats: GDSII, DXF, TDB or CIF.

Furthermore, the design file must fulfil the following criteria:

  • The design file must contain all objects in the design in the correct dimensions, layout and polarity.
  • All objects in the design file must be drawn as polygons — no circular objects or line objects are allowed.

All design files handed over to NILT are kept strictly confidential and all design file data is deleted upon customer request.

Examples - DUV Service

Various patterns and features

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