Deep UV Lithography (DUV)

Deep UV lithography (in short DUV lithography) is an optical projection type lithography
technique where the pattern on a reticle/mask is projected to the wafer surface through a 4X or 5X optical system. The wavelengths used for DUV lithography are 248 nm or 193 nm. DUV lithography is a high speed lithographic technology suitable for large area masters of discrete components that are not bigger than 22 mm x 22 mm, the typical wafer level exposure field size of a DUV tool.

Deep UV Lithography and how we can help

NIL Technology offer DUV stepper lithography services based on a Canon FPA-3000 EX4 248 nm stepper and an ASML XX 248 nm stepper. The minimum line width is ~250 nm. For smaller line widths, please refer to our EBL service.

The Canon FPA-3000 EX4 uses a 5X projection system and the maximum field size on the substrate of 22 mm x 22 mm. The system can expose 100 mm and 150 mm wafers.

The ASML XXX uses a 4X projection system and the maximum field size on the substrate of 22 mm x 22 mm. The system can expose 100 mm, 150 mm and 200 mm wafers.

We can also offer a wide variety of pre- and post-processing of wafers if required.

Deep UV Lithography specifications

Canon FPA-3000 EX4 / ASML XXSpecifications
Wavelength248 nm
Depth of focusbetter than 1 µm
Lens distortionmax 50 nm
Max field size22 mm x 22 mm
Field stitching errorless than 50 nm
Rotation accuracyBetter than 10 nm
Alignment accuracybetter than 50 nm
Minimum linewidth250 nm
Wafer sizes100 mm, 150 mm, 200 mmLess than 0.3%

Resists
All resists are used with a bottom anti-reflection coating (BARC, DUV42P) to prevent standing waves in the resist and to promote adhesion between resist and wafer. In case the DUV layer is used for lift-off, a lift-off resist is required under the BARC layer because the BARC layer is not soluble in the organic solvents typically used for lift-off.

Resist nameTone
JSR-M35GPositive
JSR-M230YPositive
UVN2300Negtive

Design file requirements

In order to allow easy handling of design files for electron beam lithography the designs must be supplied in one of the following formats: GDSII, DXF, TDB or CIF.

Furthermore, the design file must fulfil the following criteria:

  • The design file must contain all objects in the design in the correct dimensions, layout and polarity.
  • All objects in the design file must be drawn as polygons — no circular objects or line objects are allowed.

All design files handed over to NILT are kept strictly confidential and all design file data is deleted upon customer request.

Examples - DUV Service

Various patterns and features