Nanoimprint Lithography

NILT provides nanoimprint lithography as a service. Our high-quality nanopatterning is centered around an imprint stamp realized by electron beam lithography and advanced processing techniques. The stamp is subsequently applied as tool in the imprint process.

We offer imprints of large areas of nanostructures with very low defect density and to transfer imprinted patterns into substrates while preserving critical pattern dimensions.

Through our extensive network, NILT is also capable of offering customized solutions based on related technologies to fulfill customer needs.

NILT has experience in meeting complex demands for research and new product development activities, and assist customers in all stages from design to imprinted pattern.

Please contact us for pricing and additional information

NILT EXAMPLES

IMAGES (click below to enlarge)

TECHNICAL DETAILS

Imprint on GaAs Substrate

Fabrication of Quick Polymer Stamp™ (QPS™) from Silicon master stamp, used to imprint on a GaAs substrate with an imprint cycle of only 10 min.

Imprint of 100 nm lines on a 350 µm thick GaAs substrate using Quick Polymer Stamp™ (QPS™).

High Aspect Ratio Protrusions in Silicon

High quality electron beam written nanostructures. Pattern transfer into Silicon using ICP RIE etching.

Stamp with 150 nm half-pitch protrusions with the height of 1µm.

Micro Lenses in Silicon

Wafer patterning using UV lithography and subsequent pattern transfer into hard etch mask. Formation of micro-lens cavities using anisotropic etching.

Array of micro-lenses fabricated using anisotropic etching.

E-beam & Etching Service

Nanostructures made by high-quality electron beam. Etching of Silicon and SiO₂ using ICP RIE.

Creation of butterfly-wing nanostructures on Silicon membrane.